Diffusion of zinc into gaas through Al0.3Ga00.7As |
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| Authors: | Hoi-Jun Yoo Young-Se Kwon |
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| Affiliation: | (1) Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, P.O. Box 150, Cheongyangni Seoul, Korea |
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| Abstract: | The diffusion of zinc into GaAs, Al0.3Ga0.7As and Al0.3Ga0.7As/GaAs single heterostructures have been studied. The depth of the diffusion front is found to be proportional to the square
root of the diffusion time, t]1/2, and for single heterostructures the Al0.3Ga0.7As layer thickness,d
1 modifies this relationship through decreasing the junction depth byd
1 multiplied by a constant. It is shown that this relationship can be used for predicting diffusion fronts in double heterostructures. |
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| Keywords: | Diffusion zinc single heterostructure Al0 3Ga0 7As/GaAs |
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