Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111) |
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Authors: | Largeau L Dheeraj D L Tchernycheva M Cirlin G E Harmand J C |
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Affiliation: | LPN, CNRS, Route de Nozay, 91460 Marcoussis, France. |
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Abstract: | We have determined the in-plane orientation of GaN nanowires relative to the Si (111) substrate on which they were grown. We used x-ray diffraction pole figure measurements to evidence two types of crystallographic orientation, all the nanowires having Formula: see text] lateral facets. The proportion of these two orientations was determined and shown to be influenced by the pre-deposition of Al(Ga)N intermediate layers. In the main orientation, the GaN basal Formula: see text] directions are aligned with the Formula: see text] directions. This orientation corresponds to an in-plane coincidence of GaN and Si lattices. |
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