| 微波单片电路中通孔的建模 |
| |
| 引用本文： | 胡志富,王生国,何大伟,蔡树军. 微波单片电路中通孔的建模[J]. 半导体技术, 2008, 33(3): 272-274 |
| |
| 作者姓名： | 胡志富 王生国 何大伟 蔡树军 |
| |
| 作者单位： | 河北半导体研究所,石家庄,050051;河北半导体研究所,石家庄,050051;河北半导体研究所,石家庄,050051;河北半导体研究所,石家庄,050051 |
| |
| 摘 要： | 分析了理论公式在计算截圆锥通孔电感中的局限性.设计了频率在20 GHz以下GaAs基微波单片电路中通孔的专门测试结构并建立了其对应的等效电路,用去嵌入寄生参数的方法和安捷伦公司标准的IC-CAP建模系统提取了通孔的模型参数.发现对截圆锥结构的通孔,用公式计算出来的通孔的电感值比实验的结果大36%.设计了一个14-18 GHz、增益大于17 dB、输出功率为1W的GaAs基微波单片电路,验证了模型的准确性.
|
| 关 键 词： | 通孔 模型 IC-CAP |
| 文章编号： | 1003-353X（2008）03-0272-03 |
| 收稿时间： | 2007-11-20 |
| 修稿时间： | 2007-11-20 |
Modeling Via Hole Structure in MMIC |
| |
| Hu Zhifu,Wang Shengguo,He Dawei,Cai Shujun. Modeling Via Hole Structure in MMIC[J]. Semiconductor Technology, 2008, 33(3): 272-274 |
| |
| Authors: | Hu Zhifu Wang Shengguo He Dawei Cai Shujun |
| |
| Affiliation: | Hu Zhifu,Wang Shengguo,He Dawei,Cai Shujun(Heibei Semiconductor Research Institute,Shijiazhuang 050051,China) |
| |
| Abstract: | The limitation of the theoretical formula was analyzed for calculating the inductance of colum via hole. A peculiar measurement structure of via hole in GaAs-based MMIC was designed with frequency lower than 20 GHz. The equivalent circuit of the measurement structure was given. The modeling parameter of via hole was extracted by the de-embedding method and IC-CAP software. It is proved that the inductance of via hole in theory is 36% larger than that from experiments. A 14- 18 GHz GaAs-based MMIC was designed, the gain of which is lager than 17 dB with 1W output power. The accuracy of the model was validated by the GaAs-based MMIC. |
| |
| Keywords: | via hole model IC-CAP |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
