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氢还原后三氯氢硅的杂质控制
引用本文:杨丞杰,宋东明.氢还原后三氯氢硅的杂质控制[J].化学反应工程与工艺,2017,33(3).
作者姓名:杨丞杰  宋东明
作者单位:昆明冶研新材料股份有限公司,云南曲靖655000;云南省光电子硅材料制备技术企业重点实验室,云南曲靖655000
摘    要:为控制还原后三氯氢硅中杂质含量,采用Aspen Plus模拟软件对还原后三氯氢硅提纯塔进行模拟计算,考察了提纯塔的进料量、回流量和采出量对还原后三氯氢硅中硼、磷杂质的影响,并结合实际生产探索还原后三氯氢硅中碳和金属杂质的控制措施。结果表明:降低提纯塔进料量,提高提纯塔回流量和采出量能有效降低还原后三氯氢硅中硼、磷杂质含量。对还原炉钟罩、基盘和备品备件进行合理的维护和选用,能有效控制氢还原后三氯氢硅中碳和金属杂质含量。

关 键 词:多晶硅还原  三氯氢硅  杂质控制

Impurity Control of Trichlorosilane after Hydrogen Reduction
Yang Chengjie,Song Dongming.Impurity Control of Trichlorosilane after Hydrogen Reduction[J].Chemical Reaction Engineering and Technology,2017,33(3).
Authors:Yang Chengjie  Song Dongming
Abstract:In order to control the content of impurity in trichlorosilane after reduction,simulation calculations of trichlorosilane purification tower was carried out by Aspen Plus simulation software.The effects of the feed,back flow and recovery amount on the boron and phosphorus impurities in the trichlorosilane were investigated.The control measures of carbon and metal impurities in trichlorosilane after reduction were explored in the practical production.The results showed that the content of boron and phosphorus impurities in trichlorosilane can be reduced effectively after reduction of trichlorosilane by reducing the feed amount,improving the recovery and back flow rate in the purifying tower.Effectively control of the impurity content of carbon and metal after hydrogen reduction in trichlorosilane can also be made by reasonable maintenance and selection of reduction furnace bell jar,base plate and spare parts.
Keywords:silicon reduction  trichlorosilane  impurities control
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