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An Improved Gate Charge Model of HEMTs by Direct Formulating the Branch Charges |
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| Authors: | LIU Linsheng |
| Affiliation: | Ericsson (China) Communications Co., Ltd., Chengdu 610041, China |
| Abstract: | Large-signal model, Equivalent circuit, Kink effect, High electron mobility transistors （HEMTs）. |
| Keywords: | Large-signal model Equivalent circuit Kink effect High electron mobility transistors （HEMTs） |
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