| MIM隧道发光结的负阻现象 |
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| 引用本文： | 蔡益民 高中林. MIM隧道发光结的负阻现象[J]. 电子器件, 1994, 17(3): 171-176 |
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| 作者姓名： | 蔡益民 高中林 |
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| 作者单位： | 东南大学电子工程系 |
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| 摘 要： | 本文介绍了薄膜隧道发光结的基本结构、发光机理，阐述了其Ｉ－Ｖ特性中的负阻现象。简单介绍了ＭＩＭ结构负阻的几种解释，根据热像仪照片和低温测试结果分析，再结合Ｄｅａｒｍａｌｅｙ导电模型，我们提出了ＭＩＭ负阻的物理模型，理论与实验符合较好，最后分析了负阻现象的应用前景。
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| 关 键 词： | SPP波 金属－绝缘层 金属 隧道结 电流－电压 负阻 |
The Negative Resistance Phenomenon in MIM Tunneling Junction |
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| Cai YiMin,Gao ZhongLin,Sun ChengXiu. The Negative Resistance Phenomenon in MIM Tunneling Junction[J]. Journal of Electron Devices, 1994, 17(3): 171-176 |
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| Authors: | Cai YiMin Gao ZhongLin Sun ChengXiu |
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| Affiliation: | Dept of Electr.Eng.Suotheast Vni.Nanjing 210096 |
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| Abstract: | Our peper introduces a new kind of basic structure of light-emission junction and itsphotoemission mechanics,It describes also a Negative Resistance Phenomenon in I-V Cutves,According to our eperunental results and Dcarnaley's MIM conducting mode,we do our efforts toput forth the theoretical mode of this phenomenon, and explain all experimental results very well.In the end,we devise a new sort of switeh with this MIM junction. |
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| Keywords: | MIM tunneling junction SPP wave I-V negatine resistance phenomenon |
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