AuGeNi—n型GaAs欧姆接触界面微区结构与接触电阻率的关系

欧姆接触是砷化镓器件中的基本单元，它的电性能极大地影响器件的质量。在众多的欧姆接触系统中，ＡｕＧｅＮｉ系统应用最为广泛。利用扫描俄歇电子微探针对离子注入重掺杂的ｎ型ＧａＡｓ上利用快速热合金制备的ＡｕＧｅＮｉ欧姆接触进行了研究，比较了不同退火温度下欧姆接触的电性能和微区界面结构，对界面微区结构与接触电阻的关系进行了探讨，提出了产生低阻接触的理想微区结构，为工艺参数的选择提供了有益的依据。

Relationship between interfacial microstructure and contact resistance of AuGeNi Ohmic contact to n-GaAs

Ohtnic contact is a ftindamental comoonent for GaAs devices and the performance of GaAs devices is strongly influenced by the electrical properties of the contact.A variety of metallization system for Ohmic con-tact has been developed and AuGeNi system is widely used.AuGeNi contact to n-GaAs With Si heavy doped prepared by RTP has been in Vestigated by AES in tbis paper. After con1paring the electrical properties and interfacial microstructures with different anncaling tempratures, the relation between microstructure and contact resistance has been discussed.A ideal interfacial microstructure for low contact resistance was developed,which would be helpful for process parafneters selecting.