| 基于SiGe BiCMOS工艺的片上太赫兹滤波器 |
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| 引用本文： | 崔博华,李一虎,熊永忠. 基于SiGe BiCMOS工艺的片上太赫兹滤波器[J]. 太赫兹科学与电子信息学报, 2015, 13(6): 849-852 |
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| 作者姓名： | 崔博华 李一虎 熊永忠 |
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| 作者单位： | Terahertz Semiconductor Device Laboratory，China Academy of Engineering Physics，Chengdu Sichuan 611731，China,Terahertz Semiconductor Device Laboratory，China Academy of Engineering Physics，Chengdu Sichuan 611731，China and Terahertz Semiconductor Device Laboratory，China Academy of Engineering Physics，Chengdu Sichuan 611731，China |
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| 摘 要： | 基于硅锗双极-互补金属氧化物半导体(SiGe BiCMOS)工艺，采用衬底集成波导(SIW)结构，设计了几款片上太赫兹滤波器。测试结果中带宽和中心频率分别为20 GHz@139 GHz,20 GHz@168 GHz和26 GHz@324 GHz，结果表明制作的带通滤波器中心频率与设计的偏差很小；滤波器在中心频率的插入损耗为-6 dB@139 GHz,-5.5 dB@168 GHz和-5 dB@324 GHz。
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| 关 键 词： | 滤波器；太赫兹；硅锗双极-互补金属氧化物半导体；衬底集成波导 |
| 收稿时间： | 2014-10-30 |
| 修稿时间： | 2015-01-21 |
Terahertz filter based on SiGe BiCMOS process |
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| CUI Bohu,LI Yihu and XIONG Yongzhong. Terahertz filter based on SiGe BiCMOS process[J]. Journal of Terahertz Science and Electronic Information Technology, 2015, 13(6): 849-852 |
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| Authors: | CUI Bohu LI Yihu XIONG Yongzhong |
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| Abstract: | Based on Silicon Germanium Bipolar Complementary Metal Oxide Semiconductor(SiGe BiCMOS) process technology, several terahertz filters with Substrate Integrated Waveguide(SIW) structures are designed. The measured results show that the deviation of the center frequency is very small compared with the design. The center frequencies and bandwidths of the filters are 20 GHz@139 GHz, 20 GHz@168 GHz and 26 GHz@324 GHz, respectively. The insertion losses of the filters on the center frequency are -6 dB@140 GHz, -5.5 dB@170 GHz and -5 dB@330 GHz, respectively. |
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