| GaInP/GaAs/Ge三结太阳电池辐照损伤效应及加固技术研究进展 |
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| 引用本文： | 王祖军,王兴鸿,晏石兴,唐宁,崔新宇,张琦,石梦奇,黄港,聂栩,赖善坤.GaInP/GaAs/Ge三结太阳电池辐照损伤效应及加固技术研究进展[J].半导体光电,2022,43(3):490-504. |
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| 作者姓名： | 王祖军 王兴鸿 晏石兴 唐宁 崔新宇 张琦 石梦奇 黄港 聂栩 赖善坤 |
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| 作者单位： | 西北核技术研究所 强脉冲辐射环境模拟与效应国家重点实验室, 西安 710024;湘潭大学 材料科学与工程学院, 湖南 湘潭 411105;西安高科技研究所, 西安 710025;中国电子科技集团公司第十八研究所, 天津 300384;上海空间电源研究所, 上海 200245 |
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| 基金项目： | 国家自然科学基金项目(U2167208,11875223)；国家重点实验室基金项目(SKLIPR1803,SKLIPR2012,SKLIPR2113).＊通信作者:王祖军 E-mail:wzj029@qq.com |
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| 摘 要： | 文章首先重点介绍了国内外开展GaInP/GaAs/Ge三结太阳电池的电子、质子及其他辐射粒子或射线辐照实验的研究进展，然后从辐照损伤效应的仿真模拟研究、抗辐射加固技术、损伤预估方法等方面综述了GaInP/GaAs/Ge三结太阳电池辐照损伤效应及加固技术的研究进展，最后梳理了当前GaInP/GaAs/Ge三结太阳电池辐照损伤效应研究中亟待解决的关键技术问题，为深入开展GaInP/GaAs/Ge三结太阳电池辐照损伤效应实验方法标准制定、损伤机理分析、在轨寿命预估及抗辐射加固技术研究提供了理论指导和实验技术支持。
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| 关 键 词： | GaInP/GaAs/Ge三结太阳电池 辐照损伤 位移效应 抗辐射加固 电子辐照 质子辐照 |
| 收稿时间： | 2022/5/30 0:00:00 |
Progress of Radiation Effects on GaInP/GaAs/Ge Triple Junction Solar Cells |
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| WANG Zujun,WANG Xinghong,YAN Shixing,TANG Ning,CUI Xinyu,ZHANG Qi,SHI Mengqi,HUANG Gang,NIE Xu,LAI Shankun.Progress of Radiation Effects on GaInP/GaAs/Ge Triple Junction Solar Cells[J].Semiconductor Optoelectronics,2022,43(3):490-504. |
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| Authors: | WANG Zujun WANG Xinghong YAN Shixing TANG Ning CUI Xinyu ZHANG Qi SHI Mengqi HUANG Gang NIE Xu LAI Shankun |
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| Affiliation: | State Key Lab.of Intense Pulsed Radiation Simulation and Effect Northwest Institute of Nuclear Technology, Xi''an 710024, CHN;School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, CHN;Xi''an Research Institute of High-Technology, Xi''an 710025, CHN;The 18th Institute of CETC, Tianjin 300384, CHN;Shanghai Institude of Space Power-Sources, Shanghai 200245, CHN |
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| Abstract: | With the wide applications of GaInP/GaAs/Ge three-junction solar cells used in spacecraft as a space power supply system, the problem of space radiation damage is widely concerned. The performance of GaInP/GaAs/Ge three-junction solar cells will be degraded by the irradiation of the electrons, protons and other radiation particles or rays in the space radiation environment. In this paper, the research progress of the radiation experiments of GaInP/GaAs/Ge triplet solar cells induced by the electrons, protons and other radiation particles or rays at home and abroad is introduced in depth, and then the research progress of the simulation of radiation damage effect, radiation hardening, and radiation damage prediction of GaInP/GaAs/Ge three-junction solar cells is reviewed. The key problems in the research of radiation damage effect on GaInP/GaAs/Ge three-junction solar cells are summarized. It provides theoretical guidance and experimental technical support for the establishment of the experimental method of radiation damage effect, the analysis of damage mechanism, the prediction of in-orbit life and the research of radiation hardening technology of GaInP/GaAs/Ge three-junction solar cells. |
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| Keywords: | GaInP/GaAs/Ge triple-junction solar cells radiation damage displacement effect radiation hardening electron radiation proton radiation |
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