| Abstract: | A typical high-efficiency solar cell device needs the best lattice matching between different constituent layers to mitigate the open-circuit voltage loss.In the present work,the physical properties of CdS thin films are investigated where films with 100 nm thickness were fabricated on the different types of substrates viz.soda-lime glass,indium-doped tin oxide(ITO)-and fluorine-doped tin oxide (FTO)-coated glass substrates,and silicon wafer using electron beam evaporation.The X-ray diffraction patterns confirmed that deposited thin films showed cubic phase and had (111) as predominant orienta-tion where the structural parameters were observed to be varied with nature of substrates.The ohmic behaviour of the CdS films was disclosed by current-voltage characteristics,whereas the scanning electron microscopy micrograph revealed the uniform deposition of the CdS films with the presence of round-shaped grains.The elemental analysis confirmed the CdS films deposition where the Cd/S weight percentage ratio was changed with nature of substrates.The direct energy band gap was observed in the 1.63-2.50 eV range for the films grown on different substrates.The investigated properties of thin CdS layers demonstrated that the selection of substrate (in terms of nature) during device fabrication plays a crucial role. |
