| GaN基近紫外激光器研究现状与进展 |
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| 引用本文： | 李亚钦,刘建平,田爱琴,李方直,胡磊,李德尧,杨辉. GaN基近紫外激光器研究现状与进展[J]. 半导体光电, 2022, 43(3): 451-460 |
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| 作者姓名： | 李亚钦 刘建平 田爱琴 李方直 胡磊 李德尧 杨辉 |
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| 作者单位： | 中国科学技术大学 纳米技术与纳米仿生学院, 合肥 230026;中国科学院苏州纳米技术与纳米仿生研究所 纳米器件与应用重点实验室, 江苏 苏州 215123 |
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| 基金项目： | 国家重点研发计划项目(2017YFE0131500)；广东省重点研发计划项目(2020B090922001)；国家自然科学基金项目(61834008)；江苏省重点研发计划项目(BE2020004,BE2021008-1)；广东省基础与应用基础研究基金项目(2019B1515120091).＊通信作者:刘建平E-mail:jpliu2021@sinano.ac.cn |
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| 摘 要： | 氮化镓(GaN)基近紫外激光器(UVA LD,320～400 nm)在紫外固化、3D打印以及医疗等领域具有广泛应用。文章首先概述了GaN基UVA LD的国内外研究现状与关键技术挑战，然后分析了如何从外延生长与结构设计的角度，解决AlGaN的应力调控、高效p型掺杂与量子阱中极化电场的抑制等关键问题，以期为进一步实现高功率、低阈值、长寿命GaN基UVA LD的外延生长提供参考。
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| 关 键 词： | 近紫外激光器 氮化镓 应力调控 p型掺杂 极化电场 |
| 收稿时间： | 2022-05-30 |
Current Status and Advances of GaN-based UV Laser Diodes for Near-UV Wavelength |
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| LI Yaqin,LIU Jianpin,TIAN Aiqin,LI Fangzhi,HU Lei,LI Deyao,YANG Hui. Current Status and Advances of GaN-based UV Laser Diodes for Near-UV Wavelength[J]. Semiconductor Optoelectronics, 2022, 43(3): 451-460 |
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| Authors: | LI Yaqin LIU Jianpin TIAN Aiqin LI Fangzhi HU Lei LI Deyao YANG Hui |
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| Affiliation: | School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, CHN;Key Lab.of Nanodevices and Applications, Suzhou Insitute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, CHN |
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| Abstract: | GaN-based UV laser diodes for near-UV wavelength (UVA LD, 320~400nm) are widely applied in the fields such as UV curing, 3D printing and medical. In this paper, the current status and key technical challenges of GaN-based UVA LD are reviewed, and then how to solve the main challenges of stress management, efficient p-type doping in AlGaN and minimizing polarization effect in multi-quantum wells are analyzed from the epitaxial growth and structural design. This will provide theoretical guidance for the epitaxial growth of the GaN-based UVA LD with high power, low threshold and long life. |
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| Keywords: | UVA LD GaN stress management p-type doping polarization effect |
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