Optical properties of Pb1−xSnxSe thin layers grown by HWE |
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Authors: | S Charar A Obadi C Fau M Averous V D Ribes S Dal Corso B Liautard J C Tedenac S Brunet |
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Affiliation: | 1. Groupe d'Etude des Semiconductors, URA 357, CC 74, Université Montpellier II, Pl. Eugène Bataillon, F-34095, Montpellier Cédex 5, France 2. Laboratoire de Physicochimie des Matériaux, URA 407, Université Montpellier II, Pl. Eugène Bataillon, F-34095, Montpellier Cédex 5, France 3. IMP GP2M, UPR 8521, Université de Perpignan, Avenue de Villeneuve, F-66860, Perpignan Cédex, France
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Abstract: | This paper concerns the optical study of Pb1?xSnxSe /Si layers elaborated by the Hot Wall Epitaxy (HWE) technique. Optical reflection and transmission were measured for all the composition range in the PbSe — SnSe system by using a Fourier Transform Infrared Spectrometer (FTIR). From a theoretical model and the experimental reflections coefficients R, RP for respectively layer-substrate and substrate-layer and the transmission coefficient T, we have determined simultaneously the refractive index n, the extinction coefficient k and the thickness d. Then the composition and temperature energy gap dependence have been established. |
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