Dielectric Properties of Ultra‐Low Sintering Temperature Al2O3–BBSZ Glass Composite |
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| Authors: | Mei‐Yu Chen Jari Juuti Chi‐Shiung Hsi Chih‐Ta Chia Heli Jantunen |
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| Affiliation: | 1. Microelectronics and Materials Physics Laboratories, Department of Electrical Engineering, University of Oulu, Oulu, Finland;2. Department of Physics, National Taiwan Normal University, Taipei, Taiwan;3. Department of Material Science and Engineering, National United University, Miao‐Li, Taiwan |
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| Abstract: | Ceramic composites of B2O3–Bi2O3–SiO2–ZnO (BBSZ) glass mixed with Al2O3 (10–50 vol%) were sintered at 450°C, and their microstructural and dielectric properties investigated. Dense structures were obtained when the Al2O3 content was lower than 30 vol%. Raman, XRD, and FESEM showed the existence of a secondary phase, Bi24Si2O40, in all samples. The dielectric properties of the composite with 30 vol% addition of Al2O3 showed good dielectric properties with εr of 14.8 and 20.8 and 32.5 at 100 kHz and 100 MHz and 1 GHz, respectively. The tanδ values at the same frequencies were 0.004 and 0.006 and 0.016. The results show that BBSZ glass with different amounts of Al2O3 exhibit widely applicable relative permittivity values and affordable loss and are thus promising candidates for ultra‐low sintering temperature applications. |
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