Photoluminescence Properties of Heavily Eu3+‐Doped BaCa2In6O12 Phosphor for White‐Light‐Emitting Diodes |
| |
| Authors: | Jiao Zhang Yanmin Yang Yanzhou Liu Chao Mi Gang Li Boning Han Yi Zhang Hyo Jin Seo |
| |
| Affiliation: | 1. Hebei Key Lab of Optic‐Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, China;2. Institute of Photo‐Electronic Thin Film Devices and Technology, Tianjin Key Laboratory of Photo‐Electronic Thin Film Devices and Technology, Nankai University, Tianjin, China;3. Department of Physics and Interdisciplinary Program of Biomedical, Electrical and Mechanical Engineering, Pukyong National University, Busan, Republic of Korea |
| |
| Abstract: | Heavily Eu3+‐doped BaCa2In6O12 phosphors were prepared by conventional solid‐state reaction, and its structural properties were investigated by means of Rietveld refinement method using an X‐ray source. XRD patterns confirm the hexagonal phase of BaCa2In6O12: Eu3+ phosphors. The obtained spectrum data indicate that the emission spectra of Ba1?xEuxCa2In6O12 samples excited at 393 nm exhibit a series of shaped peaks assigned to the 5D0,1,2,3 →7FJ (J = 0,1,2,3,4) transitions. Luminescence from the higher excited states, such as 5D1, 5D2, and 5D3, were also observed even though the Eu3+ concentration was up to x = 0.4. More importantly, the Ba1?xEuxCa2In6O12 phosphor still emits white luminescence, when the Eu3+ ion concentration is up to x = 0.07 before concentration quenching is observed, which shows that the phosphor is a promising single‐phase phosphor for near ultraviolet (NUV) light‐emitting diodes (LED). Furthermore, the temperature's impact on white luminescent properties was studied. Finally, a white‐light‐emitting diodes (W‐LEDs) fabricated with the Ba0.95Eu0.05Ca2In6O12 phosphor incorporated with an encapsulant in ultraviolet LEDs (λmax = 395 nm) is discussed. |
| |
| Keywords: | |
|
|
