| 离子层气相反应法制备CuInS2半导体薄膜 |
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| 引用本文： | 钱进文,靳正国,邱继军,刘志锋. 离子层气相反应法制备CuInS2半导体薄膜[J]. 硅酸盐学报, 2006, 34(8): 937-940 |
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| 作者姓名： | 钱进文 靳正国 邱继军 刘志锋 |
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| 作者单位： | 天津大学材料学院,先进陶瓷与加工技术教育部重点实验室,天津,300072 |
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| 基金项目： | 天津市应用基础研究项目 |
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| 摘 要： | 以CH3CH2OH为溶剂,CuCl和InCl3为反应物,H2S为硫源,用离子层气相反应法制备了CuInS2半导体薄膜.用X射线衍射、X射线光电子谱、扫描电镜和紫外-可见光谱等对薄膜的晶型、表面化学组成、表面形貌及光电性能进行了表征.分析了混合前驱体溶液中阳离子浓度比[Cu]/[In]对薄膜化学计量及性能的影响.[Cu]/[In]≥1.25时,可获得黄铜矿结构的CuInS2薄膜,其单相形成区外[Cu]/[In]为1.45～1.65.
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| 关 键 词： | 铜铟硫薄膜 浸渍离子层气相反应 化学计量 copper-indium-sulfur thin film ion layer gas reaction stoichiometry |
| 文章编号： | 0454-5648(2006)08-0937-04 |
| 修稿时间： | 2005-11-25 |
PREPARATION OF CuInS2 THIN FILMS BY ION LAYER GAS REACTION |
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| QIAN Jinwen,JIN Zhengguo,QIU Jijun,LIU Zhifeng. PREPARATION OF CuInS2 THIN FILMS BY ION LAYER GAS REACTION[J]. Journal of The Chinese Ceramic Society, 2006, 34(8): 937-940 |
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| Authors: | QIAN Jinwen JIN Zhengguo QIU Jijun LIU Zhifeng |
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| Abstract: | The CuInS2 thin films were prepared by ion layer gas reaction using C2H5OH as a solvent, CuCl and InCl3 as reagents and H2S gas as sulfuration source. The structural, chemical, topographical development and the photoelectric properties of thin films were investigated by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and ultraviolet-visible spectroscopy. The effects of precursor solution on the stoichiometry of CuInS2 films were investigated. The results show that CuInS2 film with the complete chalcopyrite structure is obtained at [Cu]/[In] ≥ 1.25, and near stoichimetric CuInS2 without any segregation phases is obtained in the range of 1.45-1.65. |
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| Keywords: | copper-indium-sulfur thin film ion layer gas reaction stoichiometry |
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