Nitrogen-implanted SiC diodes using high-temperature implantation |
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Authors: | Ghezzo M Brown DM Downey E Kretchmer J Hennessy W Polla DL Bakhru H |
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Affiliation: | GE Corp. Res. & Dev., Schenectady, NY; |
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Abstract: | 6H-SiC diodes fabricated using high-temperature nitrogen implantation up to 1000°C are reported. Diodes were formed by RIE etching a 0.8-μm-deep mesa across the N+/P junction using NF3/O2 with an aluminum transfer mask. The junction was passivated with a deposited SiO2 layer 0.6 μm thick. Contacts were made to N+ and P regions with thin nickel and aluminum layers, respectively, followed by a short anneal between 900 and 1000°C. These diodes have reverse-bias leakage at 25°C as low as 5×10-11 A/cm2 at 10 V |
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