Effect of gas feeding methods on optical properties of GaN grown by rapid thermal chemical vapor deposition reactor |
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Authors: | Sun Jung Kim Young Hun Seo Kee Suk Nahm Yun Bong Hahn Hyun Wook Shim Eun-Kyung Suh Kee Young Lim Hyung Jae Lee |
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Affiliation: | (1) School of Chemical Engineering and Technology and Semiconductor Physics Research Center, Chonbuk National University, 561-756 Chonju, Republic of Korea;(2) Department of Physics and Semiconductor Physics Research Center, Chonbuk National University, 561-756 Chonju, Republic of Korea |
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Abstract: | The origin of the radiative recombination leading to yellow luminescence (YL) has been elucidated by the study of luminescence properties of GaN films grown with two different gas feeding methods. GaN films were grown on a (0001) sapphire substrate in a rapid thermal chemical vapor deposition (RTCVD) reactor. GaN films emitted two different luminescence energies, 2.2 and 3.47 eV, depending on the introducing position of hydrogen gas in the growth reactor. The distribution of the TMGa flow and gas phase reactions in the reactor were investigated to understand the effect of the gas feeding methods on the optical properties of GaN films. The results suggest that YL is related to Ga vacancies in the grown films. |
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Keywords: | GaN growth rapid thermal chemical vapor deposition (RTCVD) optical property gas feeding method yellow luminescence Ga vacancies |
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