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Optical monitoring of technological parameters during molecular-beam epitaxy |
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| Authors: | P. V. Volkov A. V. Goryunov A. Yu. Luk’yanov A. D. Tertyshnik A. V. Novikov D. V. Yurasov N. A. Baidakova N. N. Mikhailov V. G. Remesnik V. D. Kuzmin |
| Affiliation: | 1. Institute for Physics of Semiconductors, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia 2. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia |
| Abstract: | It is shown that one can use low-coherence tandem interferometry to measure the substrate temperature during the course of molecular-beam epitaxy in the case of oblique incidence of the probing light onto the surface. The temperature conditions in the Ob??-M installation for growing heteroepitaxial structures of cadmium and mercury tellurides and in the RIBER SIVA-21 installation for the growth of silicon-germanium structures are investigated. Calibration curves relating the readings of the standard thermocouple fixed within the heater to the true substrate temperature in the range 0?C500°C are created. |
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