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铝掺杂氧化锌薄膜的电学及光学性能
引用本文:刘耀东,李光玉,连建设. 铝掺杂氧化锌薄膜的电学及光学性能[J]. 吉林大学学报(工学版), 2007, 37(3): 495-0498
作者姓名:刘耀东  李光玉  连建设
作者单位:吉林大学,汽车材料教育部重点实验室,长春,130022;长春工业大学,材料科学与工程学院,长春,130012;吉林大学,汽车材料教育部重点实验室,长春,130022
基金项目:国家重点基础研究发展计划(973计划)
摘    要:利用脉冲激光沉积法,在氧气氛下(氧分压为11 Pa)以石英玻璃为基体沉积了铝掺杂氧化锌薄膜。靶材选用锌铝合金靶,沉积过程中基体温度保持在150℃。研究了ZnO薄膜中铝的质量分数与薄膜电学性能和发光性能的关系。结果表明,掺杂铝的质量分数为1.37%时所获得的ZnO薄膜具有最小的电阻率和较强的紫外发光特性。

关 键 词:材料实验  铝掺杂氧化锌薄膜  紫外发光  电学性能  脉冲激光沉积
文章编号:1671-5497(2007)03-0495-04
收稿时间:2006-06-12
修稿时间:2006-06-12

Effect of Al-doping on electrical and optical properties of ZnO films
Liu Yao-dong,Li Guang-yu,Lian Jian-she. Effect of Al-doping on electrical and optical properties of ZnO films[J]. Journal of Jilin University:Eng and Technol Ed, 2007, 37(3): 495-0498
Authors:Liu Yao-dong  Li Guang-yu  Lian Jian-she
Affiliation:1. The Key Lab of Automobile Materials, Ministry of Education, Jilin University, Changchun 130022, China; 2. School of Materials Science and Engineering ,Changchun University of Technology ,Changchun 130012,China
Abstract:Aluminum-doped zinc oxide(AZO) thin films have been deposited on quartz glass substrates by pulsed laser deposition from ablating metallic targets in oxygen atmosphere(11 Pa of oxygen pressure) and under a substrate temperature of 150 ℃.The structural,electrical and optical properties of these films were investigated as a function of Al-doping content in the film.It was observed that 1.37% of Al content in the film is the optimum doping content that makes the film to achieve the minimum film resisitivity and strong ultraviolet emission.
Keywords:materials experiment  aluminum-doped zinc oxide thin films  ultraviolet emission  electrical property  pulsed laser deposition
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