Characteristics of GaAsSb single-quantum-well-lasers emitting near1.3 μm |
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Authors: | Blum O Klem JF |
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Affiliation: | Sandia Nat. Labs., Albuquerque, NM; |
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Abstract: | We report data on GaAsSb single-quantum-well lasers grown on GaAs substrates. Room temperature pulsed emission at 1.275 μm in a 1250-μm-long device has been observed. Minimum threshold current densities of 535 A/cm2 were measured in 2000-μm-long lasers. We also measured internal losses of 2-5 cm-1, internal quantum efficiencies of 30%-38% and characteristic temperatures T0 of 67°C-77°C. From these parameters, a gain constant G0 of 1660 cm-1 and a transparency current density Jtr of 134 A/cm2 were calculated. The results indicate the potential for fabricating 1.3-μm vertical-cavity surface-emitting lasers from these materials |
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