| 一种新型的SOI灵敏放大器 |
| |
| 引用本文： | 刘新宇,孙海峰,海潮和,吴德馨,和致经. 一种新型的SOI灵敏放大器[J]. 电子学报, 2001, 29(6): 857-859 |
| |
| 作者姓名： | 刘新宇 孙海峰 海潮和 吴德馨 和致经 |
| |
| 作者单位： | 1. 中国科学院微电子中心,北京 100029;2. 中国科学院半导体所,北京 100083 |
| |
| 摘 要： | 本文利用"灵巧的体接触(Smart-Body-Contact)"技术设计出一种新型的SOI灵敏放大器.采用Hspice软件对体硅的和新型的交叉耦合灵敏放大器进行模拟和比较,发现新型的交叉耦合灵敏放大器比体硅的交叉耦合灵敏放大器延迟时间缩短30%,最小电压分辨可达0.05V.最后,我们成功地将该电路应用于CMOS/SOI 64Kb SRAM电路,电路存取时间仅40ns.
|
| 关 键 词： | SOI 交叉耦合灵敏放大器 灵巧的体接触技术 |
| 文章编号： | 0372-2112 (2001) 06-0857-03 |
A new SOI Sense-Amplifier |
| |
| LIU Xin yu ,SUN Hai feng ,HAI Chao he ,HE Zhi jing ,WU De xin. A new SOI Sense-Amplifier[J]. Acta Electronica Sinica, 2001, 29(6): 857-859 |
| |
| Authors: | LIU Xin yu SUN Hai feng HAI Chao he HE Zhi jing WU De xin |
| |
| Affiliation: | 1. Research and Development Center of Microelectronics,The Chinese Academy of Sciences,Beijing 100029,China;2. Institute of Semiconductors, The Chinese Academy of Sciences,Beijing 100083,China |
| |
| Abstract: | The paper proposes a new SOI sense amplifier adopting smart body contact technology.Delay time characteristics of the SOI Cross coupling sense amplifier were analyzed by Hspice simulation and compared with conventional silicon Cross coupling sense amplifier,Delay time reduction of the SOI Cross coupling sense amplifier over conventional Cross coupling silicon sense amplifier is about 30%,and voltage differential is 0 05V.Finally,the circuit was adopted successfully in CMOS/SOI 64Kb SRAM with 40ns fast access time. |
| |
| Keywords: | SOI(Silicon on insulator) cross coupling sense amplifier SBC(Smart Body Contact) technology |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《电子学报》浏览原始摘要信息 |
|
点击此处可从《电子学报》下载免费的PDF全文 |
|
