Molecular beam epitaxial GaAs/Al0.2Ga0.8Asp-channel field-effect transistors on (311)A facets of patterned (100)GaAs obtained by silicon doping

P-channel and n-channel heterostructure field effect transistors (HFETs) have been simultaneously fabricated by one-step molecular beam epitaxial growth of Si-doped Al_0.2Ga_0.8As/GaAs heterostructures on patterned (100) GaAs substrates. The p-HFETs were made on the etched (311)A facets and the n-HFETs on the planar (100) surface. A transconductance value of 23 mS/mm at 300 K for a p-HFET with a 1.1×50-μm gate is measured. The same size n-HFET made with the same structure and same level of Si doping has a transconductance value of 250 mS/mm at room temperature