GaAs varactors for linear tuning characteristics |
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| Authors: | Colquhoun A Kohn E Rabe WJ |
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| Affiliation: | AEG-Telefunken, Semiconductor Division, Heilbronn, West Germany; |
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| Abstract: | A GaAs u.h.f. varactor diode featuring linear tuning characteristics over part of its tuning range (450?750 MHz) is reported. The packaged diode has a series resistance of 270 m? at 600 MHz, with 95 m? due to the GaAs epitaxial layer. The design of the diode is presented together with technological details of its construction. |
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