| 高阻NTD-FZ-Si-P~+n结电子辐照缺陷能级N_2气氛的退火特性 |
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| 引用本文： | 董友梅 戴培英. 高阻NTD-FZ-Si-P~+n结电子辐照缺陷能级N_2气氛的退火特性[J]. 固体电子学研究与进展, 1999, 19(1): 105-110 |
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| 作者姓名： | 董友梅 戴培英 |
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| 作者单位： | [1]郑州大学图书馆 [2]郑州大学物理工程学院 |
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| 基金项目： | 河南省科委和教委自然科学基金 |
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| 摘 要： | 报导了高阻（８１～１１０Ω·ｃｍ）ＮＴＤ ＦＺ Ｓｉ Ｐ＋ｎ结中电子辐照缺陷态的退火特性。在Ｎ２气氛保护下进行等时、等温退火，测量了它们的ＤＬＴＳ谱和相应的少数载流子寿命，并对结果进行了分析讨论。
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| 关 键 词： | 电子辐照 中子嬗变掺杂高阻区熔硅P~＋n异质结 深能级瞬态谱 等时和等温退火 少数载流子寿命 |
The Annealing Characteristics of the Defect Levels in High resistivity NTD FZ Si P +n after Electron Irradiation under a Nitrogen Atmosphere |
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| Dong Youmei. The Annealing Characteristics of the Defect Levels in High resistivity NTD FZ Si P +n after Electron Irradiation under a Nitrogen Atmosphere[J]. Research & Progress of Solid State Electronics, 1999, 19(1): 105-110 |
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| Authors: | Dong Youmei |
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| Abstract: | In this paper,the annealing characteristics of the defect levels in high resistivity (81～110 Ω·cm) NTD FZ Si P +n junction after electron irradiation are reported.The isochronous and isothermal annealing proceeded under the protection of a nitrogen atmosphere.Their DLTS spectra and the lifetime of the corresponding minority carrier were measured.The experimental results were also analysed. |
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| Keywords: | Electron Irradiation NTD FZ Si P +n DLTS Isochronous and Isothermal Annealing Lifetime of Minority Carrier |
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