全固源分子束外延InAsP/InGaAsP多量子阱1.55μm激光器

利用新型全固源分子束外延技术 ,对 1 .5 5 μm波段的 In As P/ In Ga As P应变多量子阱结构的生长进行了研究。实验表明 ,较低的生长温度或较大的 / 束流比有利于提高应变多量子阱材料的结构质量 ,而生长温度对材料的光学特性有较大的影响。在此基础上生长了分别限制多量子阱激光器结构 ,制作的氧化物条形宽接触激光器实现了室温脉冲工作 ,激射波长为 1 5 63 nm,阈值电流密度为 1 .4k A/ cm2 。这是国际上首次基于全固源分子束外延的 1 .5 5 μm波段 In As P/ In Ga As P多量子阱激光器的报道

1.55 μm Wavelength InAsP/InGaAsP Multiple Quantum Well Laser Based upon Solid Source Molecular Beam Epitaxy

The growth of 1.55 μm wavelength range strained InAsP/InGaAsP multiple quantum well (MQW) structures was investigated by solid source molecular beam epitaxy (SSMBE). It was found that a low growth temperature or large Ⅴ/Ⅲ flux ratio is in favour of improving structural quality of highly strained MQW structures, and the growth temperature has a critical effect on the samples′ optical property. Finally, the broad area (BA) SCH MQW lasers are fabricated, and a threshold current density of 1.4 kA/cm 2 was measured on a 480 μm long device. This is the first report, to the best of the authors′ knowledge, on 1.55 μm wavelenth range strained InGaAsP MQW laser structure grown by SSMBE.