Structural, electrical, and optical studies of GaAs implanted with MeV As or Ga Ions |
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Authors: | J Jasinski Z Liliental-Weber J Washburn H H Tan C Jagadish A Krotkus S Marcinkevicius M Kaminska |
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Affiliation: | (1) Present address: Lawrence Berkeley National Laboratory, University of California, 94720 Berkeley, CA;(2) Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, ACT 0200 Canberra, Australia;(3) Semiconductor Physics Institute, A. Gostauto 11, 2600 Vilnius, Lithuania;(4) Institute of Experimental Physics, Warsaw University, 69, 00-681 Hoza, Warsaw, Poland;(5) Present address: Department of Physics II, Royal Institute of Technology, Stockholm, Sweden |
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Abstract: | The structural properties of GaAs implanted with high doses of 2 MeV arsenic or gallium ions with subsequent annealing at
different temperatures were studied by transmission electron microscopy, Rutherford backscattering spectrometry-channeling,
double crystal x-ray diffraction. Optical absorption, electrical conductivity, Hall effect and time-resolved photoluminescence
were applied to monitor changes in electrical and optical characteristics of the material. An important conclusion from this
investigation is that there was hardly any difference between materials implanted with gallium or arsenic. For implantation
of either species, a large number of point defects was introduced and for a high enough dose a buried amorphous layer was
formed. Hopping conduction and high absorption below band-to-band transition were observed for both cases. After low temperature
annealing of the amorphous material, a high density of stacking faults and microtwins were found. Regrowth rates at the front
and back amorphous-crystalline interfaces showed a significant difference. This was attributed to differences in local nonstoichiometry
of the material at the upper and lower amorphous-crystalline interfaces. Structural studies showed the presence of some residual
damage (a band of polycrystalline material in the center of the regrown area) with some associated strain even after annealing
at high temperatures. Recovery to the conduction band transport in annealed samples was observed but mobilities, of the order
of 2000 cmWs, were still smaller than in unimplanted GaAs. These results show that, in as-implanted material and even after
annealing at lower temperatures, the point defects introduced by the implantation are responsible for the very short photocarrier
lifetime.
*On leave from Institute of Experimental Physics, Warsaw University, Poland. |
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Keywords: | GaAs ion implantation point defects |
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