Thermodynamic Analysis on the Codeposition of SiC–Si3N4 Composite Ceramics by Chemical Vapor Deposition using SiCl4–NH3–CH4–H2–Ar Mixture Gases

A thermodynamic calculation on the chemical vapor deposition of the SiCl₄–NH₃–CH₄–H₂–Ar system was performed using the FactSage thermochemical software databases. Predominant condensed phases at equilibrium were SiC, Si₃N₄, graphite, and Si. The equilibrium conditions for the deposition of condensed phases in this system were determined as a function of the deposition temperature, dilution ratio (δ), and reactant ratios of CH₄/SiCl₄ and NH₃/SiCl₄. The CVD phase diagrams were used to understand the reactions occurring during the formation of Si–C–N from the gas species and determine the area of SiC–Si₃N₄. The concentration of condensed‐phase products was used to determine the deposition conditions of CVD SiC–Si₃N₄. The present work was helpful for further experimental investigation on CVD Si–C–N.