Role of Alumina Buffer Layer on the Dielectric and Piezoelectric Properties of PZT System Thick Films |
| |
| Authors: | Tae Hee Shin Jong‐Yoon Ha Hyun Cheol Song Seok‐Jin Yoon Seong‐Ju Hwang Sahn Nahm Hyung‐Ho Park Ji‐Won Choi |
| |
| Affiliation: | 1. Electronic Materials Research Center, Korea Institute of Science and Technology, , Seoul, 136‐791 Korea;2. School of Advanced Materials Engineering, Yonsei University, , Seoul, 120‐749 Korea;3. Institute for Research in Electronics and Applied Physics, University of Maryland, , College Park, 20742 MD;4. Department of Chemistry & Nano Sciences, Ewha Womans University, , Seoul, 120‐750 Korea;5. Department of Materials Science and Engineering, Korea University, , Seoul, 136‐701 Korea |
| |
| Abstract: | Piezoelectric properties of screen‐printed thick films, 0.01Pb(Mg1/2W1/2)O3–0.41Pb(Ni1/3Nb2/3)O3–0.35PbTiO3–0.23PbZrO3 + 0.1 wt% Y2O3 + 1.5 wt% ZnO (PMW–PNN–PT–PZ+YZ) on alumina (Al2O3) buffer layers deposited on Si substrates, were studied. To improve piezoelectric properties of and integrate the PMW–PNN–PT–PZ+YZ thick films, the Al2O3 buffer layers on silicon (Si) substrates were used. The Al2O3 buffer layer on the Si substrate suppressed the pyrochlore phases of the piezoelectric thick films and prevented interdiffusion of Si and Pb. The PMW–PNN–PT–PZ+YZ thick films with 900 nm thick Al2O3 buffer layer showed piezoelectric properties such as Pr = 32 μC/cm2, Ec = 25 kV/cm, and d33 = 32 pC/N. These significant piezoelectric properties of our screen‐printed PMW–PNN–PT–PZ+YZ thick films by the Al2O3 buffer layers can be applied to functional thick film in many micro‐electromechanical system (MEMS) applications such as micro actuators and sensors. |
| |
| Keywords: | |
|
|
