Low Dielectric Loss and Good Dielectric Thermal Stability of xNd(Zn1/2Ti1/2)O3–(1−x)Ba0.6Sr0.4TiO3 Thin Films Fabricated by Sol–Gel Method |
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| Authors: | Xiaohua Sun Ying Yang Qiaoling Zhang Shuang Hou Caihua Huang Zongzhi Hu Jun Zou Meiya Li Tianyou Peng Xing‐zhong Zhao |
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| Affiliation: | 1. School of Mechanical and Material Engineering, Research Institute for New Energy, China Three Gorges University, , Yichang, 443002 China;2. School of Physics, College of Chemistry and Molecular Science, Wuhan University, , Wuhan, 430072 China |
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| Abstract: | xNd(Zn1/2Ti1/2)O3–(1?x)Ba0.6Sr0.4TiO3 (xNZT–BST) thin films were fabricated on Pt/Ti/SiO2/Si substrates by sol–gel method with x = 0, 3%, 6%, and 10%. The structures, surface morphology, dielectric and ferroelectric properties, and thermal stability of xNZT–BST thin films were investigated as a function of NZT content. It was observed that the introduction of NZT into BST decreased grain size, dielectric constant, ferroelectricity, tunability, and significantly improved dielectric loss and dielectric thermal stability. The corresponding reasons were discussed. The 10%NZT–BST thin film exhibited the least dielectric loss of 0.005 and the lowest temperature coefficient of permittivity (TCP) of 3.2 × 10?3/°C. In addition, the figure of merit (FOM) of xNZT–BST (x = 3%, 6%, and 10%) films was higher than that of pure BST film. Our results showed that the introduction of appropriate NZT into BST could modify the dielectric quality of BST thin films with good thermal stability. Especially for the 3%NZT–BST thin film, it showed the highest FOM of 33.58 for its appropriate tunability of 32.87% and low dielectric loss of 0.0098. |
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