Correlation Between Crystallization Behavior and Network Structure in GeS2–Ga2S3–CsI Chalcogenide Glasses |
| |
| Authors: | Changgui Lin Guoshun Qu Zhuobin Li Shixun Dai Hongli Ma Tiefeng Xu Qiuhua Nie Xianghua Zhang |
| |
| Affiliation: | 1. Laboratory of Infrared Materials and Devices, Ningbo University, , Ningbo, 315211 Zhejiang, China;2. Laboratoire des Verres et Céramiques, UMR‐CNRS 6226, Institut des Sciences chimiques de Rennes, , 35042 Rennes Cedex, France |
| |
| Abstract: | Diagram of the phase transformation behavior of GeS2–Ga2S3–CsI glasses is realized in this article and the structure‐property dependence of the chalcogenide glasses is elucidated using differential scanning calorimetry and Raman spectroscopy. We observe the compositional threshold of crystallization behavior locates at x = 6–7 mol% in (100?x)(0.8GeS2–0.2Ga2S3)–xCsI glasses, which is confirmed by the thermodynamic studies. Structural motifs are derived from the Raman result that Ge(Ga)S4], S2GeI2], S3GaI], and S3Ga–GaS3] were identified to exist in this glass network. Combined with the information of structural threshold, local arrangement of these structural motifs is proposed to explain all the experimental observations, which provides a new way to understand the correlation between crystallization behavior and network structure in chalcogenide glasses. |
| |
| Keywords: | |
|
|
