Sol–Gel‐Derived Amorphous‐MgNb2O6 Thin Films for Transparent Microelectronics

In this work, transparent amorphous‐MgNb₂O₆ thin films were fabricated on ITO/glass substrates using the sol–gel method. The change in the chemical states, as well as the optical and dielectric properties of MgNb₂O₆ films at various annealing temperatures is investigated. In this study, MgNb₂O₆ films exhibited the amorphous phase when the annealing temperature was below 600°C. From X‐ray photoelectron spectroscopy, the major parts of the films' chemical states can be indexed as Mg²⁺, Nb⁵⁺, Nb⁴⁺, and O^2?. Furthermore, the Nb⁴⁺ element can be reduced at higher annealing temperatures. The average transmission percentage in the visible range (λ = 400–800 nm) is over 80% for all MgNb₂O₆/ITO/glass samples, whereas the optical band gap (E_g) for all samples is estimated at ~4 eV. In addition, the dielectric constant was calculated to be higher than 20 under a 1 MHz AC electric field, with a leakage current density below 2 × 10^?7 A/cm² at 1 V. In this study, the fabrication procedure and experiment results of MgNb₂O₆ films are introduced for transparent microelectronics.