Experimental demonstration of a silicon carbide IMPATT oscillator |
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| Authors: | Luo Yuan Cooper JA Jr Melloch MR Webb KJ |
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| Affiliation: | Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN; |
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| Abstract: | Silicon carbide (SiC) is an excellent material for high-power and high-frequency applications because of its high critical field, high electron saturation velocity, and high thermal conductivity. In this letter, we report the first experimental demonstration of microwave oscillation in 4H-SiC impact-ionization-avalanche-transit-time (IMPATT) diodes. The prototype devices are single-drift diodes with a high-low doping profile. DC characteristics exhibit hard, sustainable avalanche breakdown, as required for IMPATT operation. Microwave testing is performed in a reduced-height waveguide cavity. Oscillations are observed at 7.75 GHz at a power level of 1 mW |
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