| 碳纳米管原位包覆金属锡纳米线的制备方法及其生长机理 |
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| 引用本文： | 谭俊军,寿庆亮,牛强,孙晨曦,崔白雪,张孝彬. 碳纳米管原位包覆金属锡纳米线的制备方法及其生长机理[J]. 材料科学与工程学报, 2010, 28(4) |
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| 作者姓名： | 谭俊军 寿庆亮 牛强 孙晨曦 崔白雪 张孝彬 |
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| 作者单位： | 浙江大学,材料系,硅材料国家重点实验室,浙江,杭州,310027;浙江大学,材料系,硅材料国家重点实验室,浙江,杭州,310027;浙江大学,材料系,硅材料国家重点实验室,浙江,杭州,310027;浙江大学,材料系,硅材料国家重点实验室,浙江,杭州,310027;浙江大学,材料系,硅材料国家重点实验室,浙江,杭州,310027;浙江大学,材料系,硅材料国家重点实验室,浙江,杭州,310027 |
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| 摘 要： | 采用直接沉淀法制备出粒径为10nm以下的二氧化锡(SnO2)颗粒,将其作为前躯体采用CVD法原位生长碳纳米管,通过XRD、SEM、TEM等方法观察了该复合物的微观结构,对其生长机理做出了合理的推断。
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| 关 键 词： | 锡纳米线 原位包覆 碳纳米管 CVD 生长机理 |
In-situ Preparation of CNT-encapsulated Sn Nanowires and Investigation of the Growth Mechanism |
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| TAN Jun-jun,SHOU Qing-liang,NIU Qing,SUN Chen-xi,CUI Bai-xue,ZHANG Xiao-bin. In-situ Preparation of CNT-encapsulated Sn Nanowires and Investigation of the Growth Mechanism[J]. Journal of Materials Science and Engineering, 2010, 28(4) |
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| Authors: | TAN Jun-jun SHOU Qing-liang NIU Qing SUN Chen-xi CUI Bai-xue ZHANG Xiao-bin |
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| Affiliation: | TAN Jun-jun,SHOU Qing-liang,NIU Qing,SUN Chen-xi,CUI Bai-xue,ZHANG Xiao-bin(State Key Lab of Silicon Materials,Department of Materials Science , Engineering,Zhejiang University,Hangzhou 310027,China) |
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| Abstract: | SnO_2 nanoparticles with an average diameter less than 10 nanometers have been synthesized by chemical precipitation method.CNT-encapsulated Sn nanowires were prepared by a chemical vapor deposition(CVD) method over as-synthesized SnO_2 nanoparticles.CNT-encapsulated Sn nanowires were characterized by X-ray diffractometry(XRD),transmission electron microscopy(TEM),scanning electron microscopy(SEM).Its growth mechanism was investigated. |
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| Keywords: | Sn nanowires in-situ encapsulation carbon nanotube(CNT) CVD growth mechanism |
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