High-performance millimetre-wave mixer diodes fabricated using a deep mesa etch approach |
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| Authors: | Heaton J.L. Fabian W. Spooner F. Kraemer E.H. |
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| Affiliation: | Sperry Research Center, Sudbury, USA; |
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| Abstract: | Schottky-barrier junction mixer diodes compatible with monolithic integration have been fabricated on semi-insulating GaAs substrates using buried VPE n+ layers and deep mesa etch processing. A 590 GHz cutoff frequency was determined using modified DeLoach analysis and fin-line chip mounting. A 5.3 dB (SSB) noise figure and a 4.8 dB conversion loss were obtained at 35 GHz for a pair of chips in a balanced microstrip mixer. |
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