Dependence of Magnetoresistance on the Thickness of a Dusted Al Spacer Inserted in CoFe／Cu／CoFe Sandwiches

A series of CoFe(4nm)/Cu(X nm)Al(Y nm)/CoFe(6 nm） samples have been prepared at room temperature.An exponential decay of the GMR (Giant Magnetoresistance) with Y was observed for fixed X=2nm.The characteristic decay parameter of Al is obtained to be about 0.26nm,which is rather close to 1 monolayer for Al.A coexistant state of GMR and AMR (anisotropic magnetoresistance) was observed when Y=2nm.As the Cu spacer is replaced by Al layer,only AMR effect dominates.The experimental data further underline the important role played by the nonmagnetic spacers.

Dependence of Magnetoresistance on the Thickness of a Dusted Al Spacer Inserted in CoFe/Cu/CoFe Sandwiches

A series of CoFe(4 nm)/ Cu(X nm)M(Y nm)/ CoFe(6 nm) samples have been prepared at room temperature. An exponential decay of the GMR( Giant Magnetoresistance) with Y was observed for fixed X=2nm. The characteristic decay parameter of Al is obtained to be about 0.26nm, which is rather close to 1 monolayer for Al. A coexistant state of GMR and AMR (anisotropic magnetoresistance) was observed when Y=2 nm. As the Cu spacer is replaced by Al layer, only AMR effect dominates. The experimental data further underline the important role played by the nonmagnetic spacers.