Surface recombination current with a nonideality factor greaterthan 2 |
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Authors: | Ghannam MY Mertens RP |
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Affiliation: | Interuniv. Microelectron. Center, Leuven; |
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Abstract: | It is shown both theoretically and experimentally that under inverted surface conditions the surface recombination current of a bipolar transistor has an exponential nonideality factor >2. The behavior of the surface recombination current follows closely that of the excess leakage current in stressed-self-aligned silicon bipolar transistors at forward bias |
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