GaAs抛光片腐蚀过程初步研究 |
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引用本文: | 郝建民.GaAs抛光片腐蚀过程初步研究[J].半导体杂志,2000,25(2):17-22. |
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作者姓名: | 郝建民 |
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作者单位: | 天津电子材料研究所!天津,300192 |
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摘 要: | 采用X射线衍射、X射线双晶衍射和X射线荧光三种手段对经H2SO4:H2O2:H2O=16:1:1和3:1:1腐蚀液,在不腐蚀条件下得到的GaAs片子进行近表层结晶完整性、片子表面的残留产物以及发射二次X射线情况测量,并初步分析了这些数据。
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关 键 词: | 抛光片 腐蚀 砷化镓 |
Primary Study of Etching Process for Polished GaAs Wafers |
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Authors: | HAO Jian-min |
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Abstract: | The studied wafers were etched by H 2SO 4:H 2O 2:H 2O=16:1:1 or 3:1:1 at proper temperature. The near surface crystal perfection, the residual substance at the surface of the wafers after etching, and the secondary X-ray emission were measured by DCXRD, XRD and XRF respectively. A primary analysis was given. |
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Keywords: | Polished GaAs Wafers Etch X-ray |
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