| GaAs抛光片腐蚀过程初步研究 |
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| 引用本文： | 郝建民.GaAs抛光片腐蚀过程初步研究[J].半导体杂志,2000,25(2):17-22. |
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| 作者姓名： | 郝建民 |
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| 作者单位： | 天津电子材料研究所!天津，300192 |
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| 摘 要： | 采用Ｘ射线衍射、Ｘ射线双晶衍射和Ｘ射线荧光三种手段对经Ｈ２ＳＯ４：Ｈ２Ｏ２：Ｈ２Ｏ＝１６：１：１和３：１：１腐蚀液，在不腐蚀条件下得到的ＧａＡｓ片子进行近表层结晶完整性、片子表面的残留产物以及发射二次Ｘ射线情况测量，并初步分析了这些数据。
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| 关 键 词： | 抛光片 腐蚀 砷化镓 |
Primary Study of Etching Process for Polished GaAs Wafers |
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| Authors: | HAO Jian-min |
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| Abstract: | The studied wafers were etched by H 2SO 4:H 2O 2:H 2O=16:1:1 or 3:1:1 at proper temperature. The near surface crystal perfection, the residual substance at the surface of the wafers after etching, and the secondary X-ray emission were measured by DCXRD, XRD and XRF respectively. A primary analysis was given. |
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| Keywords: | Polished GaAs Wafers Etch X-ray |
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