Electrical and optical properties of N-type Alx Ga1-x as grown by MO-VPE |
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| Authors: | J Hallais J P André A Mircea-Roussel M Mahieu J Varon M C Boissy A T Vink |
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| Affiliation: | (1) Laboratoires d’Electronique et de Physique Appliquée, 3, avenue Descartes, 94450 Limei1-Brévannes, France;(2) La Radiotechnique Compelec, Route de la Délivrande, 14001 Caen Cedex, France;(3) Philips Research Laboratories, Eindhoven, The Netherlands |
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| Abstract: | Growth conditions and properties of AlxGa1-xAs (0.1 ≤ × ≤O.3) using metalorganic vapour phase epitaxy (MO-VPE) are investigated. N-type is achieved either by silicon
or by selenium doping. Properties of the layers are evaluated by Hall effect, cathodoluminescence and photoluminescence. It
is shown that selenium doping leads to luminescent material : when x = O.1, the efficiency is only a factor of 2 smaller than
for GaAs. Deposition temperature is a critical parameter : increasing the growth temperature yields more luminescent Alx Ga1-x As.
This work has been partly supported by the Délégation à la Recherche Scientifique et Technique (D.G.R.S.T.) |
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| Keywords: | Aluminium-Gallium arsenides epitaxy vapour phase growth luminescence |
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