Thermophysical properties data on molten semiconductors |
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Authors: | S. Nakamura T. Hibiya |
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Affiliation: | (1) Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, 305 Ibaraki, Japan |
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Abstract: | Thermophysical properties of molten semiconductors are reviewed. Published data for viscosity, thermal conductivity, surface tension, and other properties are presented. Several measurement methods often used for molten semiconductors are described. Recommended values of thermophysical properties are tabulated for Si, Ge, GaAs, InP, InSb, GaSb, and other compounds. This review shows that further measurements of thermophysical properties of GaAs and InP in the molten state are required. It is also indicated that a very limited amount of data on emissivity is available. Space experiments relating to thermophysical property measurements are described briefly.Nomenclature Density - Cp Specific heat - Kinematic viscosity - Dynamic viscosity= - Thermal diffusivity - Thermal conductivity=Cp - Volumetric thermal expansion coefficient - Surface tension - d/dT Temperature coefficient of surface tension - g Gravitational acceleration - T Temperature - T Temperature difference - L Characteristic dimension |
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Keywords: | density GaAs GaSb Ge high temperature InP InSb molten state semiconductors Si surface tension thermal conductivity viscosity |
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