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Thermophysical properties data on molten semiconductors
Authors:S. Nakamura  T. Hibiya
Affiliation:(1) Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, 305 Ibaraki, Japan
Abstract:Thermophysical properties of molten semiconductors are reviewed. Published data for viscosity, thermal conductivity, surface tension, and other properties are presented. Several measurement methods often used for molten semiconductors are described. Recommended values of thermophysical properties are tabulated for Si, Ge, GaAs, InP, InSb, GaSb, and other compounds. This review shows that further measurements of thermophysical properties of GaAs and InP in the molten state are required. It is also indicated that a very limited amount of data on emissivity is available. Space experiments relating to thermophysical property measurements are described briefly.Nomenclature rgr Density - Cp Specific heat - ngr Kinematic viscosity - mgr Dynamic viscositymgr=ngrrgr - kappa Thermal diffusivity - lambda Thermal conductivitylambda=kappaCprgr - beta Volumetric thermal expansion coefficient - gamma Surface tension - dgamma/dT Temperature coefficient of surface tension - g Gravitational acceleration - T Temperature - DeltaT Temperature difference - L Characteristic dimension
Keywords:density  GaAs  GaSb  Ge  high temperature  InP  InSb  molten state  semiconductors  Si  surface tension  thermal conductivity  viscosity
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