EPR study of hydrogen-related defects in boron-doped p-type CVD homoepitaxial diamond films |
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| Authors: | N Mizuochi M Ogura H Watanabe J Isoya H Okushi S Yamasaki |
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| Affiliation: | aGraduate School of Library, Information and Media Studies, University of Tsukuba, 1-2 Kasuga, Tsukuba, Ibaraki 305-8550, Japan;bDiamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan;cCREST JST (Japan Science and Technology), Japan |
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| Abstract: | Boron-doped p-type single crystalline chemical vapor deposition (CVD) homoepitaxial diamond films were investigated by electron paramagnetic resonance (EPR). Carbon dangling bond defects, which were accompanied by a nearby hydrogen atom, were observed in boron-doped p-type CVD diamond films on a IIa substrate similar to those observed in undoped diamond. This result suggested that the energy level position of the defects is located below the Fermi energy of boron-doped diamond, at around 0.3 eV above the valence-band top. The reason why the Fermi energy could be changed by the incorporation of boron atoms at low density (1016–1017/cm3) in the film in spite of the existence of the large defect density of EPR centers (1018/cm3) is thought to be that the singly occupied electron states of defects are located near the band edge. As for the thermal annealing effect of the defects, it was revealed that the concentration of the defects and the mobility of the p-type film did not change after annealing up to 1200 °C which is much higher than the temperature of boron–hydrogen pair dissociation. |
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| Keywords: | Boron-doped CVD diamond Defect Hydrogen Electron paramagnetic resonance |
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