硫系Ge-As-S玻璃和薄膜的特性

用差热分析，X射线衍射分析和透射光谱分析等手段研究了硫系Ge-As-S玻璃和薄膜的性能，结果表明，Ce-As-S体系的成玻能力较强在空气中自然冷却就能成玻，其（Tg-Tc)/Tg值为0.127-0.289，经激光辐射后的Ge-As-S玻璃薄膜的透射光谱曲线向短波方向移动，且平移的大小随激光功率的增加而增加，薄膜的透射光谱线的平移表明激光辐射导致薄膜光致结构变化，利用电子束辐射极化，通过Maker条纹测试方法在Ge-As-S玻璃中观察到二次谐波。

PROPERTIES OF Ge-As-S CHALCOGENIDE AMORPHOUS SEMICONDUCTOR

Ge-As-S bulk glasses and films deposited by pulse laser were studied by the differential thermal analysis, X-ray diffraction analysis and transmittance spectra analysis technologies. The results indicated that the Ge-As-S system has better glass-forming ability and the (Tg-Tc)/Tg is 0.127-0.278. The XRD results showed that the Ge-As-S bulk and film were amorphous. The transmittance spectra of bulk glasses, as-deposited films and illuminated films were different and the spectra of illuminated film shifted to shorter wavelength. The magnitude of shift increased with the increase of the intensity of the illumination light. The shift means that photoinduced change by Ar ion laser illumination happened in Ge-As-S system. By the method of Maker, second harmonic generation was observed in the Ge-As-S bulk glass poled by the electron beam.