Resonant Tunneling of Holes in GaMnAs-Related Double-Barrier Structures |
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| Authors: | H-B Wu K Chang J-B Xia and F M Peeters |
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| Affiliation: | (1) National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing, 100083, People's Republic of China;(2) Department of Physics, University of Antwerp (UIA), Universiteitplein 1, B-2610 Antwerp, Belgium |
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| Abstract: | Using the multiband quantum transmitting boundary method (MQTBM), hole resonant tunneling through AlGaAs/GaMnAs junctions is investigated theoretically. Because of band-edge splitting in the DMS layer, the current for holes with different spins are tuned in resonance at different biases. The bound levels of the  light hole in the quantum well region turned out to be dominant in the tunneling channel for both heavy and light holes. The resonant tunneling structure can be used as a spin filter for holes for adjusting the Fermi energy and the thickness of the junctions. |
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| Keywords: | Zeeman effect GaMnAs layer Double-barrier structure |
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