| 侧风扩散对半导体器件模拟结果的影响 |
| |
| 引用本文： | 滕志猛,蔡士杰.侧风扩散对半导体器件模拟结果的影响[J].固体电子学研究与进展,1997,17(3):272-280. |
| |
| 作者姓名： | 滕志猛 蔡士杰 |
| |
| 作者单位： | 南京大学计算机科学与技术系!计算机软件新技术国家重点实验室210093 |
| |
| 摘 要： | SG方法内在地具有侧风扩散现象。为了分析它对半导体器件模拟结果的影响，文中提出了一种精度高于SG方法的离散方法，然后将该方法插入到MINIMOS4．0中。离散方程采用ILUCGS方法求解。数值结果表明，半导体器件模型中的漂移项必须用高精度的离散方法离散，否则得到的数值结果不能体现物理模型的真实解。
|
| 关 键 词： | 半导体器件模拟 侧风扩散 SG方法 MINIMOS4.0 |
Influence of the Crosswind Diffusion on the Results of Semiconductor Device Simulations |
| |
| Teng Zhimeng, Cai Shijie, Zhang Fuyan.Influence of the Crosswind Diffusion on the Results of Semiconductor Device Simulations[J].Research & Progress of Solid State Electronics,1997,17(3):272-280. |
| |
| Authors: | Teng Zhimeng Cai Shijie Zhang Fuyan |
| |
| Abstract: | The crosswind diffusion is inherent in the SG scheme. In order toanalyze its influence on the results of semiconductor device simulations, this paperdevelops a new discretizaton scheme with higher accuracy than the SG scheme andsubstitutes it into MINIMOS 4.0. The discretization equations are solved by theILUCGS scheme. Numerical results show that the drift term must be discretized bythe high accurate schemes, or the corresponding results can not represent the realistic solution of the physical model. |
| |
| Keywords: | Semiconductor Device Simulations Crosswind Diffusion SG Scheme MINIMOS4 0 |
| 本文献已被 CNKI 维普 等数据库收录！ |
