Fabrication of ultra-thin strained silicon on insulator |
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Authors: | T. S. Drake C. Ní Chléirigh M. L. Lee A. J. Pitera E. A. Fitzgerald D. A. Antoniadis D. H. Anjum J. Li R. Hull N. Klymko J. L. Hoyt |
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Affiliation: | (1) Massachusetts Institute of Technology, Microsystems Technology Laboratories, 02139 Cambridge, MA;(2) Department of Materials Science, University of Virginia, 22904 Charlottesville, VA;(3) IBM Microelectronics Division, 12524 Fishkill, NY |
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Abstract: | A bond and etch back technique for the fabrication of 13-nm-thick, strained silicon directly on insulator has been developed. The use of a double etch stop allows the transfer of a thin strained silicon layer with across-wafer thickness uniformity comparable to the as-grown epitaxial layers. Surface roughness of less than 1 nm was achieved. Raman analysis confirms strain remains in the thin silicon layers after the removal of the SiGe that induced the strain. Ultra-thin strained silicon-on-insulator (SSOI) substrates are promising for the fabrication of ultra-thin body and double-gate, strained Si metal-oxide semiconductor field-effect transistors (MOSFETs). |
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Keywords: | Strained silicon SiGe SOI wafer bonding selective etch SSOI |
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