向65nm工艺提升中的半导体清洗技术

由于器件尺寸由90nm技术节点向65nm节点的缩进,在前道工艺的湿法清洗中去除0.1μm及更小尺寸的污染粒子正在成为一种新的技术挑战。评价了在向65nm技术节点的迈进中,器件的新结构、新材料对于清洗设备提出的各种技术挑战及应对无损伤和抑制腐蚀损伤的清洗技术。指出了单片式清洗技术的应用前景及干法清洗与湿法清洗技术共存的可能性。

Semiconductor Cleaning Technology for Rising to 65nm Node

As the IC devices size reduce from 90 nm to the 65 nm node generatins, it is becoming a new challenge to remove the particles 0.1 μm or smaller in FEOL. In this paper, the Various technology challenges and cleaning technlogies against damage-free and restrain corrosion damage for cleaning eguipment used in the 65 nm device generations new struetares and materials was evaluated. And finally, the apply prospect of single-wafer cleaning and the probability both for drying cleaning and wet processing coexist were pointed out.