A vertical-cavity surface-emitting laser appliqued to a 0.8-/spl mu/m NMOS driver |
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Authors: | DL Mathine R Droopad GN Maracas |
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Affiliation: | Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA; |
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Abstract: | An optoelectronic integrated circuit (OEIC) composed of a vertical-cavity surface-emitting laser (VCSEL) appliqued to an NMOS drive circuit was fabricated to form an optical link from the CMOS chip. A custom NMOS circuit was designed and fabricated through the MOSIS foundry service in a standard 0.8-/spl mu/m CMOS process. InGaAs quantum-well VCSELs were grown, fabricated and tested on an n-type GaAs substrate. Next, the VCSELs underwent a substrate removal technique and were appliqued to the NMOS circuitry. The OEIC was tested at the chip level and showed an electrical to optical conversion efficiency of 1.09 mW/V. Modulation results are also discussed. |
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