AlGaAs/GaAs lateral current injection multiquantum well (LCI-MQW)laser using impurity-induced disordering |
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| Authors: | Furuya A. Makiuchi M. Wada O. Fujii T. |
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| Affiliation: | Fujitsu Lab., Ltd., Atsugi; |
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| Abstract: | A lateral current injection (LCI) multiquantum-well (MQW) laser having planar structure is proposed and its advantages compared with conventional vertical structure lasers. A LCI-MQW laser has been fabricated by using Si- and Zn-induced disordering of an MQW active layer. It is shown that a threshold current of 27 mA is achieved under pulsed current driven at room temperature and a very low stray capacitance of 0.27 pF is obtained at zero bias voltage |
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