Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes |
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Authors: | I A Buyanova M Izadifard L Storasta W M Chen Jihyun Kim F Ren G Thaler C R Abernathy S J Pearton C -C Pan G -T Chen J -I Chyi J M Zavada |
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Affiliation: | (1) Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping, Sweden;(2) Department of Chemical Engineering, University of Florida, 32611 Gainesville, FL;(3) Department of Materials Science and Engineering, University of Florida, 32611 Gainesville, FL;(4) Department of Electrical Engineering, National Central University, 32054 Chung-Li, Taiwan, Republic of China;(5) U.S. Army Research Office, 27709 Research Triangle Park, NC |
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Abstract: | (Ga,Mn)/N/InGaN multiquantum well (MQW) diodes were grown by molecular beam epitaxy (MBE). The current-voltage characteristics
of the diodes show the presence of a parasitic junction between the (Ga,Mn)N and the n-GaN in the top contact layer due to
the low conductivity of the former layer. Both the (Ga,Mn)N/InGaN diodes and control samples without Mn doping show no or
very low (up to 10% at the lowest temperatures) optical (spin) polarization at zero field or 5 T, respectively. The observed
polarization is shown to correspond to the intrinsic optical polarization of the InGaN MQW, due to population distribution
between spin sublevels at low temperature, as separately studied by resonant optical excitation with a photon energy lower
than the bandgap of both the GaN and (Ga,Mn)N. This indicates efficient losses in the studied structures of any spin polarization
generated by optical spin orientation or electrical spin injection. The observed vanishing spin injection efficiency of the
spin light-emitting diode (LED) is tentatively attributed to spin losses during the energy relaxation process to the ground
state of the excitons giving rise to the light emission. |
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Keywords: | (Ga Mn)N/InGaN multiquantum well (MQW) molecular beam epitaxy (MBE) light-emitting diode (LED) |
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