(AlxGa1—x)yIn1—yP Films an Its Optical Constants on the Surface |
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引用本文: | ZHANGShu-zhi HUANGBo-biao 等. (AlxGa1—x)yIn1—yP Films an Its Optical Constants on the Surface[J]. 半导体光子学与技术, 1999, 5(2): 86-91 |
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作者姓名: | ZHANGShu-zhi HUANGBo-biao 等 |
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作者单位: | [1]Dept.ofOptoelectr.andInforma.Eng.,ShandongUniversity,Jinan250100,CHN [2]InstituteofCrystalMaterials,Shan |
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基金项目: | National "863" Project Foundation (No.863-715-001-0171). |
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摘 要: | The optical parameters for three samples of intrinsic,doped Si and doped Mg(AlxGa1-x)yIn1-yP prepared by the MOCVD on GaAs substrate were measured by using ellipsometry and were calculated by the two-layer absorption film model.The results obtained were discussed.The grown rates and thickness of oxidic layer on the intrinsic(AlxGa1-x)yIn1-yP surface exposed in the atmosphere were studied.Alinear dependence of oxidic layer thickness on the time was obtained.
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关 键 词: | 椭圆光度法 光参数 氧化层 二层吸收薄膜 半导体 铝镓铟磷 四元化合物 |
收稿时间: | 1998-11-25 |
(AlxGa1-x)yIn1-yP Films and Its Optical Constants on the Surface |
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Abstract: | The optical parameters for three samples of intrinsic,doped Si and doped Mg(AlxGa1-x)yIn1-yP prepared by the MOCVD on GaAs substrate were measured by using ellipsometry and were calculated by the two-layer absorption film model.The results obtained were discussed.The grown rates and thickness of oxidic layer on the intrinsic(AlxGa1-x)yIn1-yP surface exposed in the atmosphere were studied.Alinear dependence of oxidic layer thickness on the time was obtained. |
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Keywords: | Ellipsometry Optical Parameters Oxidic Layer Two-layer Absorption Film Model |
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