| （AlxGa1—x）yIn1—yP Films an Its Optical Constants on the Surface |
| |
| 引用本文： | ZHANGShu－zhi HUANGBo－biao 等. （AlxGa1—x）yIn1—yP Films an Its Optical Constants on the Surface[J]. 半导体光子学与技术, 1999, 5(2): 86-91 |
| |
| 作者姓名： | ZHANGShu－zhi HUANGBo－biao 等 |
| |
| 作者单位： | [1]Dept.ofOptoelectr.andInforma.Eng.,ShandongUniversity,Jinan250100,CHN [2]InstituteofCrystalMaterials,Shan |
| |
| 基金项目： | National "863" Project Foundation (No.863-715-001-0171). |
| |
| 摘 要： | The optical parameters for three samples of intrinsic,doped Si and doped Mg（AlxGa1-x)yIn1-yP prepared by the MOCVD on GaAs substrate were measured by using ellipsometry and were calculated by the two-layer absorption film model.The results obtained were discussed.The grown rates and thickness of oxidic layer on the intrinsic（AlxGa1-x)yIn1-yP surface exposed in the atmosphere were studied.Alinear dependence of oxidic layer thickness on the time was obtained.
|
| 关 键 词： | 椭圆光度法 光参数 氧化层 二层吸收薄膜 半导体 铝镓铟磷 四元化合物 |
| 收稿时间： | 1998-11-25 |
(AlxGa1-x)yIn1-yP Films and Its Optical Constants on the Surface |
| |
| Abstract: | The optical parameters for three samples of intrinsic,doped Si and doped Mg（AlxGa1-x)yIn1-yP prepared by the MOCVD on GaAs substrate were measured by using ellipsometry and were calculated by the two-layer absorption film model.The results obtained were discussed.The grown rates and thickness of oxidic layer on the intrinsic（AlxGa1-x)yIn1-yP surface exposed in the atmosphere were studied.Alinear dependence of oxidic layer thickness on the time was obtained. |
| |
| Keywords: | Ellipsometry Optical Parameters Oxidic Layer Two-layer Absorption Film Model |
| 本文献已被 维普 等数据库收录！ |
