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A 1.0 V differential VCO in 0.13 μm CMOS technology
引用本文:曹圣国,韩科锋,谈熙,闫娜,闵昊.A 1.0 V differential VCO in 0.13 μm CMOS technology[J].半导体学报,2011,32(2):126-129.
作者姓名:曹圣国  韩科锋  谈熙  闫娜  闵昊
作者单位:State Key Laboratory of ASIC & System;Fudan University;
基金项目:Project supported by the Important National Science and Technology Specific Projects of China(No.2009ZX01031-003-002); the National High Technology Research and Development Program of China(No.2009AA011605)
摘    要:A differential complementary LC voltage controlled oscillator(VCO) with high Q on-chip inductor is presented.The parallel resonator of the VCO consists of inversion-mode MOS(I-MOS) capacitors and an on-chip inductor.The resonator Q factor is mainly limited by the on-chip inductor.It is optimized by designing a single turn inductor that has a simulated Q factor of about 35 at 6 GHz.The proposed VCO is implemented in the SMIC 0.13μm 1P8M MMRF CMOS process,and the chip area is 1.0×0.8 mm~2.The free-running frequency is from 5.73 to 6.35 GHz.When oscillating at 6.35 GHz,the current consumption is 2.55 mA from a supply voltage of 1.0 V and the measured phase noise at 1 MHz offset is -120.14 dBc/Hz.The figure of merit of the proposed VCO is -192.13 dBc/Hz.

关 键 词:differential  voltage  controlled  oscillator  CMOS  inversion-mode  MOS  capacitors  on-chip  inductors
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